Residual Stress in Ni-Mn-Ga Thin Films Deposited on Different Substrates

S. Doyle; V. A. Chernenko; S. Besseghini; A. Gambardella; M. Kohl; P. Müllner; M. Ohtsuka

doi:10.1140/epjst/e2008-00660-8

Residual Stress in Ni-Mn-Ga Thin Films Deposited on Different Substrates

S. Doyle
, V. A. Chernenko
, S. Besseghini
, A. Gambardella
, M. Kohl
, P. Müllner
, M. Ohtsuka

Micron School of Materials Science and Engineering

Karlsruhe Institute of Technology
NASU - Institute of Magnetism of NAS and MES of Ukraine
National Research Council of Italy
Tohoku University

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Four series of Ni_51.4Mn_28.3Ga_20.3/ substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni_53.5 Mn_23.8Ga_22.7/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 μm have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d₂₂₀ is studied for the films deposited on Si(100).

Original language	American English
Pages (from-to)	99-105
Number of pages	7
Journal	European Physical Journal: Special Topics
Volume	158
Issue number	1
DOIs	https://doi.org/10.1140/epjst/e2008-00660-8
State	Published - May 2008

EGS Disciplines

Materials Science and Engineering

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title = "Residual Stress in Ni-Mn-Ga Thin Films Deposited on Different Substrates",

abstract = "Four series of Ni51.4Mn28.3Ga20.3/ substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni53.5 Mn23.8Ga22.7/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 μm have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d220 is studied for the films deposited on Si(100).",

author = "S. Doyle and Chernenko, \{V. A.\} and S. Besseghini and A. Gambardella and M. Kohl and P. M{\"u}llner and M. Ohtsuka",

year = "2008",

month = may,

doi = "10.1140/epjst/e2008-00660-8",

language = "American English",

volume = "158",

pages = "99--105",

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TY - JOUR

T1 - Residual Stress in Ni-Mn-Ga Thin Films Deposited on Different Substrates

AU - Doyle, S.

AU - Chernenko, V. A.

AU - Besseghini, S.

AU - Gambardella, A.

AU - Kohl, M.

AU - Müllner, P.

AU - Ohtsuka, M.

PY - 2008/5

Y1 - 2008/5

N2 - Four series of Ni51.4Mn28.3Ga20.3/ substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni53.5 Mn23.8Ga22.7/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 μm have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d220 is studied for the films deposited on Si(100).

AB - Four series of Ni51.4Mn28.3Ga20.3/ substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni53.5 Mn23.8Ga22.7/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 μm have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d220 is studied for the films deposited on Si(100).

UR - https://www.scopus.com/pages/publications/43049149429

UR - https://scholarworks.boisestate.edu/mse_facpubs/46

U2 - 10.1140/epjst/e2008-00660-8

DO - 10.1140/epjst/e2008-00660-8

M3 - Article

SN - 1951-6355

VL - 158

SP - 99

EP - 105

JO - European Physical Journal: Special Topics

JF - European Physical Journal: Special Topics

IS - 1

ER -

Residual Stress in Ni-Mn-Ga Thin Films Deposited on Different Substrates

Abstract

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