Resistance switching in SnxMnyTez -based devices

Patrick K. Herring, Kristy A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Electronic devices comprised of a single layer of the chalcogenide material SnxMnyTez (35 < x,z < 50; 0 < y < 28) deposited between two electrodes were fabricated and electrically tested for their ability to switch between high and low resistance states. Materials that have the ability to resistively switch when a potential is applied across them are promising as new electronic memory materials. In this work, the type of electrodes and the concentration of Mn present in the SnxMn yTez layer were both found to influence the ability of the device to resistively switch. When the top electrode material was Ag, resistance switching was observed. Additionally, only SnxMn yTez films with concentrations of Mn between 3 and 10 % were found to exhibit consistent switching.

Original languageEnglish
Title of host publication2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06
Pages21-22
Number of pages2
DOIs
StatePublished - 2006
Event2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06 - Boise, ID, United States
Duration: 14 Apr 200614 Apr 2006

Publication series

Name2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06

Conference

Conference2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06
Country/TerritoryUnited States
CityBoise, ID
Period14/04/0614/04/06

Keywords

  • Chalcogenide
  • Memory
  • Resistance variable
  • Switching

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