Resistive memory sensing using delta-sigma modulation

H. Rapole; A. Rajagiri; M. Balasubramanian; K. A. Campbell; R. J. Baker

doi:10.1109/WMED.2009.4816149

Resistive memory sensing using delta-sigma modulation

H. Rapole, A. Rajagiri, M. Balasubramanian, K. A. Campbell, R. J. Baker

Electrical Engineering Department

Boise State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The design of four resistive memory sensing circuittopologies employing Delta-Sigma modulation arepresented. Operation of the designs and a comparison betweensimulations and experimentation is given. The designs werefabricated in a 500 nm CMOS process. Measured results indicatethat the resistive values ranging from a chosen referenceresistance to several hundred k can be sensed reliably.

Original language	English
Title of host publication	2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009
Pages	63-66
Number of pages	4
DOIs	https://doi.org/10.1109/WMED.2009.4816149
State	Published - 2009
Event	2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009 - Boise, ID, United States Duration: 3 Apr 2009 → 3 Apr 2009

Publication series

Name	2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009

Conference

Conference	2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009
Country/Territory	United States
City	Boise, ID
Period	3/04/09 → 3/04/09

Keywords

CMOS
Delta-sigma modulation non-volatile memory
Resistive memory
Sensing

Access to Document

10.1109/WMED.2009.4816149

Cite this

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title = "Resistive memory sensing using delta-sigma modulation",

abstract = "The design of four resistive memory sensing circuittopologies employing Delta-Sigma modulation arepresented. Operation of the designs and a comparison betweensimulations and experimentation is given. The designs werefabricated in a 500 nm CMOS process. Measured results indicatethat the resistive values ranging from a chosen referenceresistance to several hundred k can be sensed reliably.",

keywords = "CMOS, Delta-sigma modulation non-volatile memory, Resistive memory, Sensing",

author = "H. Rapole and A. Rajagiri and M. Balasubramanian and Campbell, {K. A.} and Baker, {R. J.}",

year = "2009",

doi = "10.1109/WMED.2009.4816149",

language = "English",

isbn = "9781424435524",

series = "2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009",

pages = "63--66",

booktitle = "2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009",

note = "2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009 ; Conference date: 03-04-2009 Through 03-04-2009",

}

Rapole, H, Rajagiri, A, Balasubramanian, M, Campbell, KA & Baker, RJ 2009, Resistive memory sensing using delta-sigma modulation. in 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009., 4816149, 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009, pp. 63-66, 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009, Boise, ID, United States, 3/04/09. https://doi.org/10.1109/WMED.2009.4816149

Resistive memory sensing using delta-sigma modulation. / Rapole, H.; Rajagiri, A.; Balasubramanian, M. et al.
2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009. 2009. p. 63-66 4816149 (2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Resistive memory sensing using delta-sigma modulation

AU - Rapole, H.

AU - Rajagiri, A.

AU - Balasubramanian, M.

AU - Campbell, K. A.

AU - Baker, R. J.

PY - 2009

Y1 - 2009

N2 - The design of four resistive memory sensing circuittopologies employing Delta-Sigma modulation arepresented. Operation of the designs and a comparison betweensimulations and experimentation is given. The designs werefabricated in a 500 nm CMOS process. Measured results indicatethat the resistive values ranging from a chosen referenceresistance to several hundred k can be sensed reliably.

AB - The design of four resistive memory sensing circuittopologies employing Delta-Sigma modulation arepresented. Operation of the designs and a comparison betweensimulations and experimentation is given. The designs werefabricated in a 500 nm CMOS process. Measured results indicatethat the resistive values ranging from a chosen referenceresistance to several hundred k can be sensed reliably.

KW - CMOS

KW - Delta-sigma modulation non-volatile memory

KW - Resistive memory

KW - Sensing

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U2 - 10.1109/WMED.2009.4816149

DO - 10.1109/WMED.2009.4816149

M3 - Conference contribution

AN - SCOPUS:67650109066

SN - 9781424435524

T3 - 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009

SP - 63

EP - 66

BT - 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009

T2 - 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009

Y2 - 3 April 2009 through 3 April 2009

ER -

Resistive memory sensing using delta-sigma modulation

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Conference

Keywords

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