Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy

Yoon Jung Chang; Paul J. Simmonds; Brett Beekley; Mark S. Goorsky; Jason C.S. Woo

doi:10.1063/1.4947436

Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy

Yoon Jung Chang
, Paul J. Simmonds
, Brett Beekley
, Mark S. Goorsky
, Jason C.S. Woo

Physics Department

University of California at Los Angeles

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO₂ mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120nm tall and ≤100nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p⁺-Si/n⁺-GaAs p-n diodes.

Original language	English
Article number	163106
Journal	Applied Physics Letters
Volume	108
Issue number	16
DOIs	https://doi.org/10.1063/1.4947436
State	Published - 18 Apr 2016

Access to Document

10.1063/1.4947436

Cite this

@article{2417dbbcc4ac4132806e07d266687083,

title = "Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy",

abstract = "Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120nm tall and ≤100nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+-Si/n+-GaAs p-n diodes.",

author = "Chang, \{Yoon Jung\} and Simmonds, \{Paul J.\} and Brett Beekley and Goorsky, \{Mark S.\} and Woo, \{Jason C.S.\}",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = apr,

day = "18",

doi = "10.1063/1.4947436",

language = "English",

volume = "108",

number = "16",

}

TY - JOUR

T1 - Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy

AU - Chang, Yoon Jung

AU - Simmonds, Paul J.

AU - Beekley, Brett

AU - Goorsky, Mark S.

AU - Woo, Jason C.S.

PY - 2016/4/18

Y1 - 2016/4/18

N2 - Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120nm tall and ≤100nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+-Si/n+-GaAs p-n diodes.

AB - Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120nm tall and ≤100nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+-Si/n+-GaAs p-n diodes.

UR - https://www.scopus.com/pages/publications/84966292129

U2 - 10.1063/1.4947436

DO - 10.1063/1.4947436

M3 - Article

AN - SCOPUS:84966292129

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163106

ER -

Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this