@inproceedings{fd29fd3b4780496dacd7caa7f3525351,
title = "Silver chalcogenide based memristor devices",
abstract = "We have fabricated two-terminal chalcogenide-based devices containing Ge2Se3 and Ag that function as memristors. These devices have been electrically characterized at room temperature using quasi-static DC methods, AC sinusoidal methods, and AC pulse testing methods. In all cases, the devices exhibit memristive behavior.",
keywords = "Memory Device, Memristor, Thin Film Devices",
author = "Oblea, {Antonio S.} and Achyut Timilsina and David Moore and Campbell, {Kristy A.}",
year = "2010",
doi = "10.1109/IJCNN.2010.5596775",
language = "English",
isbn = "9781424469178",
series = "Proceedings of the International Joint Conference on Neural Networks",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2010 IEEE World Congress on Computational Intelligence, WCCI 2010 - 2010 International Joint Conference on Neural Networks, IJCNN 2010",
note = "2010 6th IEEE World Congress on Computational Intelligence, WCCI 2010 - 2010 International Joint Conference on Neural Networks, IJCNN 2010 ; Conference date: 18-07-2010 Through 23-07-2010",
}