Silver chalcogenide based memristor devices

Antonio S. Oblea, Achyut Timilsina, David Moore, Kristy A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

101 Scopus citations

Abstract

We have fabricated two-terminal chalcogenide-based devices containing Ge2Se3 and Ag that function as memristors. These devices have been electrically characterized at room temperature using quasi-static DC methods, AC sinusoidal methods, and AC pulse testing methods. In all cases, the devices exhibit memristive behavior.

Original languageEnglish
Title of host publication2010 IEEE World Congress on Computational Intelligence, WCCI 2010 - 2010 International Joint Conference on Neural Networks, IJCNN 2010
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781424469178
DOIs
StatePublished - 2010
Event2010 6th IEEE World Congress on Computational Intelligence, WCCI 2010 - 2010 International Joint Conference on Neural Networks, IJCNN 2010 - Barcelona, Spain
Duration: 18 Jul 201023 Jul 2010

Publication series

NameProceedings of the International Joint Conference on Neural Networks

Conference

Conference2010 6th IEEE World Congress on Computational Intelligence, WCCI 2010 - 2010 International Joint Conference on Neural Networks, IJCNN 2010
Country/TerritorySpain
CityBarcelona
Period18/07/1023/07/10

Keywords

  • Memory Device
  • Memristor
  • Thin Film Devices

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