Simulation of Plasticity in Nanocrystalline Silicon

M. J. Demkowicz, A. S. Argon, D. Farkas, Megan Frary

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Abstract

Molecular dynamics investigation of plasticity in a model nanocrystalline silicon system demonstrates that inelastic deformation localizes in intergranular regions. The carriers of plasticity in these regions are atomic environments that can be described as high-density liquid-like amorphous silicon. During fully developed flow, plasticity is confined to system-spanning intergranular zones of easy flow. As an active flow zone rotates out of the plane of maximum resolved shear stress during deformation to large strain, new zones of easy flow are formed. Compatibility of the microstructure is accommodated by processes such as grain rotation and formation of new grains. Nano-scale voids or cracks may form if there emerge stress concentrations that cannot be relaxed by a mechanism that simultaneously preserves microstructural compatibility.

Original languageAmerican English
Pages (from-to)4253-4271
Number of pages19
JournalPhilosophical Magazine
Volume87
Issue number28
DOIs
StatePublished - Oct 2007

Keywords

  • grain boundary
  • microstructural compatibility
  • molecular dynamics
  • nanocrystalline
  • plasticity
  • silicon

EGS Disciplines

  • Materials Science and Engineering

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