Single electron tunneling effect in YBCO films

J. I. Kye, W. K. Park, B. I. Kim, Z. G. Khim, G. T. Jeong, D. H. Lee, T. E. Shim, J. G. Lee

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We have measured the tunneling spectra of c-axis-oriented YBCO films prepared by the sputtering method. In some spots, the spectra show periodic current steps at the corresponding voltages of V = (2n + 1)δV/2 or V = nδV. We have measured δV with the variation of the sample-to-tip distance. The resulting voltage period δV = e/C increases as the sample-to-tip distance increases. This behavior is explained by single electron tunneling. The simulated conductance, with the assumption of a normal state density of states for both the metal grains and the YBCO surface layer, shows a good agreement with the experimental result, indicating that the surface layer of YBCO is in a normal state due to oxygen deficiency.

Original languageEnglish
Pages (from-to)354-359
Number of pages6
JournalJournal of the Korean Physical Society
Volume29
Issue number3
StatePublished - 1996

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