Spike timing-dependent synaptic plasticity using memristors and nano-crystalline silicon TFT memories

Kurtis D. Cantley; Anand Subramaniam; Harvey J. Stiegler; Richard A. Chapman; Eric M. Vogel

doi:10.1109/NANO.2011.6144430

Spike timing-dependent synaptic plasticity using memristors and nano-crystalline silicon TFT memories

Kurtis D. Cantley, Anand Subramaniam, Harvey J. Stiegler, Richard A. Chapman, Eric M. Vogel

Electrical Engineering Department

University of Texas at Dallas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

Neural circuits based on ambipolar nano-crystalline silicon TFTs and memristive synapses are investigated via SPICE simulations. The drive transistor for the memristive devices is an ambipolar TFT with memory that could be physically implemented using a metal nanoparticle layer within the gate dielectric. It is shown that using such a device adds spike-timing dependence to changes in the synaptic weight. In experiments with action potential pairs, the synaptic weight modification is similar to biological data. Further, asymmetric temporal integration of the weight change is demonstrated using pre-post-pre and post-pre-post spike triplets. Finally, the dependence of weight changes on frequency is presented. This is followed by a discussion of applications and issues which require further analysis.

Original language	English
Title of host publication	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages	421-425
Number of pages	5
DOIs	https://doi.org/10.1109/NANO.2011.6144430
State	Published - 2011
Event	2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States Duration: 15 Aug 2011 → 19 Aug 2011

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Country/Territory	United States
City	Portland, OR
Period	15/08/11 → 19/08/11

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10.1109/NANO.2011.6144430

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Cantley, K. D., Subramaniam, A., Stiegler, H. J., Chapman, R. A., & Vogel, E. M. (2011). Spike timing-dependent synaptic plasticity using memristors and nano-crystalline silicon TFT memories. In 2011 11th IEEE International Conference on Nanotechnology, NANO 2011 (pp. 421-425). Article 6144430 (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2011.6144430

@inproceedings{81bfc8ba98ba47cfb83ff516f3725342,

title = "Spike timing-dependent synaptic plasticity using memristors and nano-crystalline silicon TFT memories",

abstract = "Neural circuits based on ambipolar nano-crystalline silicon TFTs and memristive synapses are investigated via SPICE simulations. The drive transistor for the memristive devices is an ambipolar TFT with memory that could be physically implemented using a metal nanoparticle layer within the gate dielectric. It is shown that using such a device adds spike-timing dependence to changes in the synaptic weight. In experiments with action potential pairs, the synaptic weight modification is similar to biological data. Further, asymmetric temporal integration of the weight change is demonstrated using pre-post-pre and post-pre-post spike triplets. Finally, the dependence of weight changes on frequency is presented. This is followed by a discussion of applications and issues which require further analysis.",

author = "Cantley, \{Kurtis D.\} and Anand Subramaniam and Stiegler, \{Harvey J.\} and Chapman, \{Richard A.\} and Vogel, \{Eric M.\}",

year = "2011",

doi = "10.1109/NANO.2011.6144430",

language = "English",

isbn = "9781457715143",

series = "Proceedings of the IEEE Conference on Nanotechnology",

pages = "421--425",

booktitle = "2011 11th IEEE International Conference on Nanotechnology, NANO 2011",

note = "2011 11th IEEE International Conference on Nanotechnology, NANO 2011 ; Conference date: 15-08-2011 Through 19-08-2011",

}

Cantley, KD, Subramaniam, A, Stiegler, HJ, Chapman, RA & Vogel, EM 2011, Spike timing-dependent synaptic plasticity using memristors and nano-crystalline silicon TFT memories. in 2011 11th IEEE International Conference on Nanotechnology, NANO 2011., 6144430, Proceedings of the IEEE Conference on Nanotechnology, pp. 421-425, 2011 11th IEEE International Conference on Nanotechnology, NANO 2011, Portland, OR, United States, 15/08/11. https://doi.org/10.1109/NANO.2011.6144430

Spike timing-dependent synaptic plasticity using memristors and nano-crystalline silicon TFT memories. / Cantley, Kurtis D.; Subramaniam, Anand; Stiegler, Harvey J. et al.
2011 11th IEEE International Conference on Nanotechnology, NANO 2011. 2011. p. 421-425 6144430 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Spike timing-dependent synaptic plasticity using memristors and nano-crystalline silicon TFT memories

AU - Cantley, Kurtis D.

AU - Subramaniam, Anand

AU - Stiegler, Harvey J.

AU - Chapman, Richard A.

AU - Vogel, Eric M.

PY - 2011

Y1 - 2011

N2 - Neural circuits based on ambipolar nano-crystalline silicon TFTs and memristive synapses are investigated via SPICE simulations. The drive transistor for the memristive devices is an ambipolar TFT with memory that could be physically implemented using a metal nanoparticle layer within the gate dielectric. It is shown that using such a device adds spike-timing dependence to changes in the synaptic weight. In experiments with action potential pairs, the synaptic weight modification is similar to biological data. Further, asymmetric temporal integration of the weight change is demonstrated using pre-post-pre and post-pre-post spike triplets. Finally, the dependence of weight changes on frequency is presented. This is followed by a discussion of applications and issues which require further analysis.

AB - Neural circuits based on ambipolar nano-crystalline silicon TFTs and memristive synapses are investigated via SPICE simulations. The drive transistor for the memristive devices is an ambipolar TFT with memory that could be physically implemented using a metal nanoparticle layer within the gate dielectric. It is shown that using such a device adds spike-timing dependence to changes in the synaptic weight. In experiments with action potential pairs, the synaptic weight modification is similar to biological data. Further, asymmetric temporal integration of the weight change is demonstrated using pre-post-pre and post-pre-post spike triplets. Finally, the dependence of weight changes on frequency is presented. This is followed by a discussion of applications and issues which require further analysis.

UR - https://www.scopus.com/pages/publications/84858959525

U2 - 10.1109/NANO.2011.6144430

DO - 10.1109/NANO.2011.6144430

M3 - Conference contribution

AN - SCOPUS:84858959525

SN - 9781457715143

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 421

EP - 425

BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011

T2 - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011

Y2 - 15 August 2011 through 19 August 2011

ER -

Spike timing-dependent synaptic plasticity using memristors and nano-crystalline silicon TFT memories

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