SRAM subthreshold current recovery after unipolar AC stressing

A trapped charge model to decrease subthreshold current in static random access storage (SRAM) was proposed, which leds to lower standby current on continous negative unipolar write stress. The stress on the transistor gates that cause defects in the gate oxide led to higher leakage and higher subthreshold current. The stress results into hot hole injection into the oxide because of high drain and gate voltages. The trapped positive charges in the gate oxide lowers the surface potential, which resulted in decrease in sub threshold current.