TY - JOUR
T1 - Stacked dual-oxide MOS energy band diagram visual representation program (IRW student paper)
AU - Southwick, Richard G.
AU - Knowlton, William B.
PY - 2006/6
Y1 - 2006/6
N2 - Energy band diagrams for MOS devices are essential for understanding device performance and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO 2) interfacial layer requires an even greater understanding of the energy band behavior. A program that quickly determines the band diagrams based on a simple analytical model was created. It is used to explore the behavior of various oxide stacks with the ability to easily vary important parameters like oxide material, electron affinity, bandgap, dielectric constant, and thickness. The usefulness of this program to predict potential reliability issues is also demonstrated.
AB - Energy band diagrams for MOS devices are essential for understanding device performance and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO 2) interfacial layer requires an even greater understanding of the energy band behavior. A program that quickly determines the band diagrams based on a simple analytical model was created. It is used to explore the behavior of various oxide stacks with the ability to easily vary important parameters like oxide material, electron affinity, bandgap, dielectric constant, and thickness. The usefulness of this program to predict potential reliability issues is also demonstrated.
KW - Dual oxide
KW - Energy band
KW - High-k
KW - MOS
KW - Reliability
UR - http://www.scopus.com/inward/record.url?scp=33748113122&partnerID=8YFLogxK
U2 - 10.1109/TDMR.2006.876971
DO - 10.1109/TDMR.2006.876971
M3 - Article
AN - SCOPUS:33748113122
SN - 1530-4388
VL - 6
SP - 136
EP - 145
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
IS - 2
M1 - 1673701
ER -