Static Impedance Behavior of Programmable Metallization Cells

M. Mitkova

doi:10.1016/j.sse.2014.12.019

Static Impedance Behavior of Programmable Metallization Cells

M. Mitkova

Electrical Engineering Department

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge ₃₀ Se ₇₀ ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.

Original language	American English
Journal	Solid-State Electronics
DOIs	https://doi.org/10.1016/j.sse.2014.12.019
State	Published - 1 Apr 2015

Keywords

Resistive RAM (ReRAM)
chalcogenide
impedance
nano-ionic memory
parametric model
programmable metallization cells

EGS Disciplines

Electrical and Computer Engineering

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10.1016/j.sse.2014.12.019License: Unspecified

http://dx.doi.org/10.1016/j.sse.2014.12.019

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@article{40037fcea0c54804a8a5b09295c01085,

title = "Static Impedance Behavior of Programmable Metallization Cells",

abstract = " Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge 30 Se 70 ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.",

keywords = "Resistive RAM (ReRAM), chalcogenide, impedance, nano-ionic memory, parametric model, programmable metallization cells",

author = "M. Mitkova",

note = "Mitkova, Maria. (2015). {"}Static Impedance Behavior of Programmable Metallization Cells{"}. Solid-State Electronics, 106, 27-33. http://dx.doi.org/10.1016/j.sse.2014.12.019",

year = "2015",

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doi = "10.1016/j.sse.2014.12.019",

language = "American English",

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TY - JOUR

T1 - Static Impedance Behavior of Programmable Metallization Cells

AU - Mitkova, M.

N1 - Mitkova, Maria. (2015). "Static Impedance Behavior of Programmable Metallization Cells". Solid-State Electronics, 106, 27-33. http://dx.doi.org/10.1016/j.sse.2014.12.019

PY - 2015/4/1

Y1 - 2015/4/1

N2 - Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge 30 Se 70 ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.

AB - Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge 30 Se 70 ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.

KW - Resistive RAM (ReRAM)

KW - chalcogenide

KW - impedance

KW - nano-ionic memory

KW - parametric model

KW - programmable metallization cells

UR - https://scholarworks.boisestate.edu/electrical_facpubs/280

UR - http://dx.doi.org/10.1016/j.sse.2014.12.019

U2 - 10.1016/j.sse.2014.12.019

DO - 10.1016/j.sse.2014.12.019

M3 - Article

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Static Impedance Behavior of Programmable Metallization Cells

Abstract

Keywords

EGS Disciplines

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