Structural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing

Ping Chen; Mahesh Ailavajhala; Maria I. Mitkova; Dmitri A. Tenne; Ivan Sanchez Esqueda; Hugh Barnaby

doi:10.1109/WMED.2011.5767271

Structural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing

Ping Chen, Mahesh Ailavajhala, Maria I. Mitkova, Dmitri A. Tenne, Ivan Sanchez Esqueda, Hugh Barnaby

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

1 Downloads (Pure)

Abstract

Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.

Original language	American English
Title of host publication	2011 IEEE Workshop on Microelectronics and Electron Devices (WMED)
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/WMED.2011.5767271
State	Published - 22 Apr 2011
Event	2011 IEEE Workshop on Microelectronics and Electron Devices (WMED) - Duration: 22 Apr 2011 → …

Conference

Conference	2011 IEEE Workshop on Microelectronics and Electron Devices (WMED)
Period	22/04/11 → …

Keywords

Raman spectroscopy
chalcogenide glasses
radiation induced effects
radiation sensor
resistance change
solid electrolyte glasses

EGS Disciplines

Electrical and Computer Engineering

Access to Document

10.1109/WMED.2011.5767271License: Unspecified

Structural Study of Ag-Ge-S Solid Electrolyte Glass System for ReAccepted author manuscript, 833 KBLicense: Other

Cite this

@inproceedings{9acec149e9e84963aab3cf0e63f11fde,

title = "Structural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing",

abstract = " Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.",

keywords = "Raman spectroscopy, chalcogenide glasses, radiation induced effects, radiation sensor, resistance change, solid electrolyte glasses",

author = "Ping Chen and Mahesh Ailavajhala and Mitkova, \{Maria I.\} and Tenne, \{Dmitri A.\} and Esqueda, \{Ivan Sanchez\} and Hugh Barnaby",

note = "{\textcopyright} 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. DOI: 10.1109/WMED.2011.5767271; 2011 IEEE Workshop on Microelectronics and Electron Devices (WMED) ; Conference date: 22-04-2011",

year = "2011",

month = apr,

day = "22",

doi = "10.1109/WMED.2011.5767271",

language = "American English",

pages = "1--4",

booktitle = "2011 IEEE Workshop on Microelectronics and Electron Devices (WMED)",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

Chen, P, Ailavajhala, M, Mitkova, MI, Tenne, DA, Esqueda, IS & Barnaby, H 2011, Structural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing. in 2011 IEEE Workshop on Microelectronics and Electron Devices (WMED). Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 2011 IEEE Workshop on Microelectronics and Electron Devices (WMED), 22/04/11. https://doi.org/10.1109/WMED.2011.5767271

Structural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing. / Chen, Ping; Ailavajhala, Mahesh; Mitkova, Maria I. et al.
2011 IEEE Workshop on Microelectronics and Electron Devices (WMED). Institute of Electrical and Electronics Engineers Inc., 2011. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Structural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing

AU - Chen, Ping

AU - Ailavajhala, Mahesh

AU - Mitkova, Maria I.

AU - Tenne, Dmitri A.

AU - Esqueda, Ivan Sanchez

AU - Barnaby, Hugh

N1 - © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. DOI: 10.1109/WMED.2011.5767271

PY - 2011/4/22

Y1 - 2011/4/22

N2 - Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.

AB - Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.

KW - Raman spectroscopy

KW - chalcogenide glasses

KW - radiation induced effects

KW - radiation sensor

KW - resistance change

KW - solid electrolyte glasses

UR - https://scholarworks.boisestate.edu/electrical_facpubs/137

U2 - 10.1109/WMED.2011.5767271

DO - 10.1109/WMED.2011.5767271

M3 - Conference contribution

SP - 1

EP - 4

BT - 2011 IEEE Workshop on Microelectronics and Electron Devices (WMED)

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2011 IEEE Workshop on Microelectronics and Electron Devices (WMED)

Y2 - 22 April 2011

ER -

Structural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing

Abstract

Conference

Keywords

EGS Disciplines

Access to Document

Other files and links

Fingerprint

Cite this