TY - GEN
T1 - Submicron ambipolar nanocrystalline-silicon TFTs with high-K gate dielectrics
AU - Subramaniam, Anand
AU - Cantley, Kurtis D.
AU - Chapman, Richard A.
AU - Stiegler, Harvey J.
AU - Vogel, Eric M.
PY - 2011
Y1 - 2011
N2 - Thin-film transistors (TFTs) that use hydrogenated nanocrystalline-silicon (nc-Si) as the channel material are favorable for use in neuromorphic circuits [1] as well as in flat-panel displays. Nanocrystalline-Si can be deposited over large areas at low temperatures, thus enabling three-dimensional integration with CMOS structures. Recently, nc-Si TFTs that exhibit high channel mobility and provide stable operation under voltage bias stress have been fabricated [2]. In this work, the subthreshold swing, electron and hole threshold voltages (V T), and field-effect mobilities are considerably improved by using high-K dielectrics instead of SiO 2. These gains will translate to circuits with lower operating voltages at the same performance.
AB - Thin-film transistors (TFTs) that use hydrogenated nanocrystalline-silicon (nc-Si) as the channel material are favorable for use in neuromorphic circuits [1] as well as in flat-panel displays. Nanocrystalline-Si can be deposited over large areas at low temperatures, thus enabling three-dimensional integration with CMOS structures. Recently, nc-Si TFTs that exhibit high channel mobility and provide stable operation under voltage bias stress have been fabricated [2]. In this work, the subthreshold swing, electron and hole threshold voltages (V T), and field-effect mobilities are considerably improved by using high-K dielectrics instead of SiO 2. These gains will translate to circuits with lower operating voltages at the same performance.
UR - https://www.scopus.com/pages/publications/84857206327
U2 - 10.1109/ISDRS.2011.6135227
DO - 10.1109/ISDRS.2011.6135227
M3 - Conference contribution
AN - SCOPUS:84857206327
SN - 9781457717550
T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
T2 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
Y2 - 7 December 2011 through 9 December 2011
ER -