Tailored ION/IOFF ratio of nanotube network transistors by pulsed breakdown

David Estrada; Aidee San Miguel; Ryan Pecora; Eric Pop

doi:10.1109/ISDRS.2009.5378024

Tailored I_ON/I_OFF ratio of nanotube network transistors by pulsed breakdown

David Estrada
, Aidee San Miguel
, Ryan Pecora
, Eric Pop

Micron School of Materials Science and Engineering

University of Illinois at Urbana-Champaign

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378024
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 9 Dec 2009 → 11 Dec 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	9/12/09 → 11/12/09

Access to Document

10.1109/ISDRS.2009.5378024

Cite this

@inproceedings{323834968adb4626a2b046bc2abe78b6,

title = "Tailored ION/IOFF ratio of nanotube network transistors by pulsed breakdown",

author = "David Estrada and Miguel, \{Aidee San\} and Ryan Pecora and Eric Pop",

year = "2009",

doi = "10.1109/ISDRS.2009.5378024",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Estrada, D, Miguel, AS, Pecora, R & Pop, E 2009, Tailored I_ON/I_OFF ratio of nanotube network transistors by pulsed breakdown. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378024, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 9/12/09. https://doi.org/10.1109/ISDRS.2009.5378024

Tailored I_ON/I_OFF ratio of nanotube network transistors by pulsed breakdown. / Estrada, David; Miguel, Aidee San; Pecora, Ryan et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378024 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Tailored ION/IOFF ratio of nanotube network transistors by pulsed breakdown

AU - Estrada, David

AU - Miguel, Aidee San

AU - Pecora, Ryan

AU - Pop, Eric

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/77949367801

U2 - 10.1109/ISDRS.2009.5378024

DO - 10.1109/ISDRS.2009.5378024

M3 - Conference contribution

AN - SCOPUS:77949367801

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Tailored I_ON/I_OFF ratio of nanotube network transistors by pulsed breakdown

Publication series

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