Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks

Richard G. Southwick; Justin Reed; Christopher Buu; Hieu Bui; Ross Butler; G. Bersuker; William B. Knowlton

doi:10.1109/IRWS.2008.4796084

Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks

Richard G. Southwick, Justin Reed, Christopher Buu, Hieu Bui, Ross Butler, G. Bersuker, William B. Knowlton

Micron School of Materials Science and Engineering

Boise State University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Original language	American English
Journal	IEEE International Integrated Reliability Workshop Final Report (IRW 2008)
DOIs	https://doi.org/10.1109/IRWS.2008.4796084
State	Published - 12 Oct 2008

Keywords

MOSFET
Poole-Frenkel effect
hafnium compounds
high-k dielectric thin films

EGS Disciplines

Electrical and Computer Engineering

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10.1109/IRWS.2008.4796084License: Unspecified

Temperature (5Final published version, 4.82 MBLicense: Unspecified

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@article{42f31a0b0ca2441a8149db46501e0bc4,

title = "Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks",

keywords = "MOSFET, Poole-Frenkel effect, hafnium compounds, high-k dielectric thin films",

author = "Southwick, {Richard G.} and Justin Reed and Christopher Buu and Hieu Bui and Ross Butler and G. Bersuker and Knowlton, {William B.}",

year = "2008",

month = oct,

day = "12",

doi = "10.1109/IRWS.2008.4796084",

language = "American English",

}

TY - JOUR

T1 - Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks

AU - Southwick, Richard G.

AU - Reed, Justin

AU - Buu, Christopher

AU - Bui, Hieu

AU - Butler, Ross

AU - Bersuker, G.

AU - Knowlton, William B.

PY - 2008/10/12

Y1 - 2008/10/12

KW - MOSFET

KW - Poole-Frenkel effect

KW - hafnium compounds

KW - high-k dielectric thin films

UR - http://scholarworks.boisestate.edu/cgi/viewcontent.cgi?article=1057&context=electrical_facpubs

UR - https://scholarworks.boisestate.edu/electrical_facpubs/58

U2 - 10.1109/IRWS.2008.4796084

DO - 10.1109/IRWS.2008.4796084

M3 - Article

JO - IEEE International Integrated Reliability Workshop Final Report (IRW 2008)

JF - IEEE International Integrated Reliability Workshop Final Report (IRW 2008)

ER -

Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks

Keywords

EGS Disciplines

Access to Document

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