Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks

Richard G. Southwick; J. Reed; C. Buu; H. Bui; R. Butler; G. Bersuker; W. B. Knowlton

doi:10.1109/IRWS.2008.4796130

Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO₂/SiO₂ and SiO₂ MOS Gate Stacks

Richard G. Southwick, J. Reed, C. Buu, H. Bui, R. Butler, G. Bersuker, W. B. Knowlton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

J_Gate for HfO₂ is strongly temperature dependent For low temperatures, J_Gate is: carrier limited below V_th tunneling rate limited above V_th SiO₂ and HfO₂ show two different transport regimes HfO₂ pMOSFETs in accumulation have multiple temperature dependencies Gate voltage dependence on activation energy Frenkel-Poole and thermochemical model do not adequately explain Weak electric field interaction Fermi level position?

Original language	English
Title of host publication	2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781424421954
DOIs	https://doi.org/10.1109/IRWS.2008.4796130
State	Published - 2008
Event	2008 IEEE International Integrated Reliability Workshop, IRW 2008 - South Lake Tahoe, CA, United States Duration: 12 Oct 2008 → 16 Oct 2008

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
ISSN (Print)	1930-8841
ISSN (Electronic)	2374-8036

Conference

Conference	2008 IEEE International Integrated Reliability Workshop, IRW 2008
Country/Territory	United States
City	South Lake Tahoe, CA
Period	12/10/08 → 16/10/08

Access to Document

10.1109/IRWS.2008.4796130

Cite this

Southwick, R. G., Reed, J., Buu, C., Bui, H., Butler, R., Bersuker, G., & Knowlton, W. B. (2008). Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO₂/SiO₂ and SiO₂ MOS Gate Stacks. In 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008 Article 4796130 (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2008.4796130

Southwick, Richard G. ; Reed, J. ; Buu, C. et al. / Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO₂/SiO₂ and SiO₂ MOS Gate Stacks. 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008. Institute of Electrical and Electronics Engineers Inc., 2008. (IEEE International Integrated Reliability Workshop Final Report).

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title = "Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks",

abstract = "JGate for HfO2 is strongly temperature dependent For low temperatures, JGate is: carrier limited below Vth tunneling rate limited above Vth SiO2 and HfO2 show two different transport regimes HfO2 pMOSFETs in accumulation have multiple temperature dependencies Gate voltage dependence on activation energy Frenkel-Poole and thermochemical model do not adequately explain Weak electric field interaction Fermi level position?",

author = "Southwick, \{Richard G.\} and J. Reed and C. Buu and H. Bui and R. Butler and G. Bersuker and Knowlton, \{W. B.\}",

year = "2008",

doi = "10.1109/IRWS.2008.4796130",

language = "English",

isbn = "9781424421954",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008",

address = "United States",

note = "2008 IEEE International Integrated Reliability Workshop, IRW 2008 ; Conference date: 12-10-2008 Through 16-10-2008",

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Southwick, RG, Reed, J, Buu, C, Bui, H, Butler, R, Bersuker, G & Knowlton, WB 2008, Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO₂/SiO₂ and SiO₂ MOS Gate Stacks. in 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008., 4796130, IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., 2008 IEEE International Integrated Reliability Workshop, IRW 2008, South Lake Tahoe, CA, United States, 12/10/08. https://doi.org/10.1109/IRWS.2008.4796130

Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO₂/SiO₂ and SiO₂ MOS Gate Stacks. / Southwick, Richard G.; Reed, J.; Buu, C. et al.
2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008. Institute of Electrical and Electronics Engineers Inc., 2008. 4796130 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Southwick, Richard G.

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AU - Bui, H.

AU - Butler, R.

AU - Bersuker, G.

AU - Knowlton, W. B.

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AB - JGate for HfO2 is strongly temperature dependent For low temperatures, JGate is: carrier limited below Vth tunneling rate limited above Vth SiO2 and HfO2 show two different transport regimes HfO2 pMOSFETs in accumulation have multiple temperature dependencies Gate voltage dependence on activation energy Frenkel-Poole and thermochemical model do not adequately explain Weak electric field interaction Fermi level position?

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M3 - Conference contribution

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SN - 9781424421954

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PB - Institute of Electrical and Electronics Engineers Inc.

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Southwick RG, Reed J, Buu C, Bui H, Butler R, Bersuker G et al. Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO₂/SiO₂ and SiO₂ MOS Gate Stacks. In 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008. Institute of Electrical and Electronics Engineers Inc. 2008. 4796130. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2008.4796130