Temperature Effects on Gallium Nitride Field Emitter Arrays

Ranajoy Bhattacharyar; Pao Chuan Shih; Tomas Palacios; Jim Browning

doi:10.1109/IVNC57695.2023.10188994

Temperature Effects on Gallium Nitride Field Emitter Arrays

Ranajoy Bhattacharyar, Pao Chuan Shih, Tomas Palacios, Jim Browning

Electrical Engineering Department

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Gallium nitride (GaN) field emitter arrays are being studied for use as vacuum channel transistors (VCTs). In this work, arrays of 150×150 GaN field emitters were characterized before and after heat treatment at 400° C. Collector voltage was kept at 200V DC, and the gate voltage was swept from 0 to 75V. From the I-V measurements, a jump in emission current, a form of conditioning, was observed after a few voltage sweeps resulting in a stable emission current. After heat treatment at 400° C for 10 minutes, ≈ 4 times increase in current was observed, reaching a maximum field emission current of ≈ 10 μA, at 75 V.

Original language	English
Title of host publication	36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	219-220
Number of pages	2
ISBN (Electronic)	9798350301434
DOIs	https://doi.org/10.1109/IVNC57695.2023.10188994
State	Published - 2023
Event	36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023 - Cambridge, United States Duration: 10 Jul 2023 → 13 Jul 2023

Publication series

Name	36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023

Conference

Conference	36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023
Country/Territory	United States
City	Cambridge
Period	10/07/23 → 13/07/23

Keywords

field emission performance
GaN field emitter arrays
high temperature I-V characterization

Access to Document

10.1109/IVNC57695.2023.10188994

Cite this

Bhattacharyar, R., Shih, P. C., Palacios, T., & Browning, J. (2023). Temperature Effects on Gallium Nitride Field Emitter Arrays. In 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023 (pp. 219-220). (36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC57695.2023.10188994

@inproceedings{d02a81f022cc4d019efcefa192e08b01,

title = "Temperature Effects on Gallium Nitride Field Emitter Arrays",

abstract = "Gallium nitride (GaN) field emitter arrays are being studied for use as vacuum channel transistors (VCTs). In this work, arrays of 150×150 GaN field emitters were characterized before and after heat treatment at 400° C. Collector voltage was kept at 200V DC, and the gate voltage was swept from 0 to 75V. From the I-V measurements, a jump in emission current, a form of conditioning, was observed after a few voltage sweeps resulting in a stable emission current. After heat treatment at 400° C for 10 minutes, ≈ 4 times increase in current was observed, reaching a maximum field emission current of ≈ 10 μA, at 75 V.",

keywords = "field emission performance, GaN field emitter arrays, high temperature I-V characterization",

author = "Ranajoy Bhattacharyar and Shih, {Pao Chuan} and Tomas Palacios and Jim Browning",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023 ; Conference date: 10-07-2023 Through 13-07-2023",

year = "2023",

doi = "10.1109/IVNC57695.2023.10188994",

language = "English",

series = "36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "219--220",

booktitle = "36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023",

}

Bhattacharyar, R, Shih, PC, Palacios, T & Browning, J 2023, Temperature Effects on Gallium Nitride Field Emitter Arrays. in 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023. 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023, Institute of Electrical and Electronics Engineers Inc., pp. 219-220, 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023, Cambridge, United States, 10/07/23. https://doi.org/10.1109/IVNC57695.2023.10188994

Temperature Effects on Gallium Nitride Field Emitter Arrays. / Bhattacharyar, Ranajoy; Shih, Pao Chuan; Palacios, Tomas et al.
36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 219-220 (36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Temperature Effects on Gallium Nitride Field Emitter Arrays

AU - Bhattacharyar, Ranajoy

AU - Shih, Pao Chuan

AU - Palacios, Tomas

AU - Browning, Jim

PY - 2023

Y1 - 2023

N2 - Gallium nitride (GaN) field emitter arrays are being studied for use as vacuum channel transistors (VCTs). In this work, arrays of 150×150 GaN field emitters were characterized before and after heat treatment at 400° C. Collector voltage was kept at 200V DC, and the gate voltage was swept from 0 to 75V. From the I-V measurements, a jump in emission current, a form of conditioning, was observed after a few voltage sweeps resulting in a stable emission current. After heat treatment at 400° C for 10 minutes, ≈ 4 times increase in current was observed, reaching a maximum field emission current of ≈ 10 μA, at 75 V.

AB - Gallium nitride (GaN) field emitter arrays are being studied for use as vacuum channel transistors (VCTs). In this work, arrays of 150×150 GaN field emitters were characterized before and after heat treatment at 400° C. Collector voltage was kept at 200V DC, and the gate voltage was swept from 0 to 75V. From the I-V measurements, a jump in emission current, a form of conditioning, was observed after a few voltage sweeps resulting in a stable emission current. After heat treatment at 400° C for 10 minutes, ≈ 4 times increase in current was observed, reaching a maximum field emission current of ≈ 10 μA, at 75 V.

KW - field emission performance

KW - GaN field emitter arrays

KW - high temperature I-V characterization

UR - http://www.scopus.com/inward/record.url?scp=85168704863&partnerID=8YFLogxK

U2 - 10.1109/IVNC57695.2023.10188994

DO - 10.1109/IVNC57695.2023.10188994

M3 - Conference contribution

AN - SCOPUS:85168704863

T3 - 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023

SP - 219

EP - 220

BT - 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023

Y2 - 10 July 2023 through 13 July 2023

ER -

Temperature Effects on Gallium Nitride Field Emitter Arrays

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this