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Tensile-Strained InGaAs Quantum Dots With Interband Emission in the Mid-Infrared

  • K. D. Vallejo
  • , T. A. Garrett
  • , C. I. Cabrera-Perdomo
  • , M. D. Nordstrom
  • , B. Liang
  • , K. A. Grossklaus
  • , Paul J. Simmonds
  • Idaho National Laboratory
  • Boise State University
  • Universidad Autonoma de Zacatecas
  • California NanoSystems Institute
  • Tufts University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Strain due to lattice mismatch is frequently used during molecular beam epitaxy of III-V semiconductor materials to both modify the electronic band structure and to drive nanostructure self-assembly. We harness these effects to synthesize tensile-strained quantum dots whose light emission is dramatically red-shifted relative to their bulk band gap energy. We demonstrate tunable light emission from tensile-strained InGaAs/GaSb quantum dots, which represents a path towards future optoelectronic devices operating in the mid-wave infrared.

Original languageEnglish
Title of host publication2025 IEEE Photonics Conference, IPC 2025 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331525590
DOIs
StatePublished - 2025
Event2025 IEEE Photonics Conference, IPC 2025 - Singapore, Singapore
Duration: 9 Nov 202513 Nov 2025

Publication series

Name2025 IEEE Photonics Conference, IPC 2025 - Proceedings

Conference

Conference2025 IEEE Photonics Conference, IPC 2025
Country/TerritorySingapore
CitySingapore
Period9/11/2513/11/25

Keywords

  • III-V semiconductors
  • InGaAs
  • molecular beam epitaxy
  • MWIR
  • quantum dots
  • self-assembly
  • tensile strain

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