The formation of InAs quantum dots in an aluminum oxide matrix

D. A. Tenne; O. R. Bajutova; A. K. Bakarov; A. K. Kalagin; A. G. Milekhin; A. I. Toropov; D. R.T. Zahn

doi:10.1134/1.1498783

The formation of InAs quantum dots in an aluminum oxide matrix

D. A. Tenne, O. R. Bajutova, A. K. Bakarov, A. K. Kalagin, A. G. Milekhin, A. I. Toropov, D. R.T. Zahn

Physics Department

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4 Scopus citations

Abstract

The formation of InAs quantum dots in an aluminum oxide matrix by selective oxidation of AlAs layers in an InAs/AlAs heterostructure is studied. According to the Raman spectroscopy data, the process of selective oxidation leads to stress relaxation in the InAs quantum dots and to the formation of amorphous arsenic at the boundary between oxidized and unoxidized regions.

Original language	English
Pages (from-to)	554-556
Number of pages	3
Journal	Technical Physics Letters
Volume	28
Issue number	7
DOIs	https://doi.org/10.1134/1.1498783
State	Published - 1 Jul 2002

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title = "The formation of InAs quantum dots in an aluminum oxide matrix",

abstract = "The formation of InAs quantum dots in an aluminum oxide matrix by selective oxidation of AlAs layers in an InAs/AlAs heterostructure is studied. According to the Raman spectroscopy data, the process of selective oxidation leads to stress relaxation in the InAs quantum dots and to the formation of amorphous arsenic at the boundary between oxidized and unoxidized regions.",

author = "Tenne, {D. A.} and Bajutova, {O. R.} and Bakarov, {A. K.} and Kalagin, {A. K.} and Milekhin, {A. G.} and Toropov, {A. I.} and Zahn, {D. R.T.}",

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T1 - The formation of InAs quantum dots in an aluminum oxide matrix

AU - Tenne, D. A.

AU - Bajutova, O. R.

AU - Bakarov, A. K.

AU - Kalagin, A. K.

AU - Milekhin, A. G.

AU - Toropov, A. I.

AU - Zahn, D. R.T.

PY - 2002/7/1

Y1 - 2002/7/1

N2 - The formation of InAs quantum dots in an aluminum oxide matrix by selective oxidation of AlAs layers in an InAs/AlAs heterostructure is studied. According to the Raman spectroscopy data, the process of selective oxidation leads to stress relaxation in the InAs quantum dots and to the formation of amorphous arsenic at the boundary between oxidized and unoxidized regions.

AB - The formation of InAs quantum dots in an aluminum oxide matrix by selective oxidation of AlAs layers in an InAs/AlAs heterostructure is studied. According to the Raman spectroscopy data, the process of selective oxidation leads to stress relaxation in the InAs quantum dots and to the formation of amorphous arsenic at the boundary between oxidized and unoxidized regions.

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U2 - 10.1134/1.1498783

DO - 10.1134/1.1498783

M3 - Article

AN - SCOPUS:0035994905

SN - 1063-7850

VL - 28

SP - 554

EP - 556

JO - Technical Physics Letters

JF - Technical Physics Letters

IS - 7

ER -

The formation of InAs quantum dots in an aluminum oxide matrix

Abstract

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