The self-directed channel memristor: Operational dependence on the metal-chalcogenide layer

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

11 Scopus citations

Abstract

The basic self-directed channel memristor is comprised of five layers of Ge2Se3, SnSe, and an oxidizable metal, Ag. Each layer plays a role in the operation of the memristor, influencing both the electrical and thermal properties of the device. Device operation can be altered by manipulation of these layers through material changes, layer ordering, or layer exclusion. In this chapter the function of the SnSe layer is explored through electrical characterization of several device types in which this metal chalcogenide layer has been altered, either by changing the metal, or replacing Se with Te.

Original languageEnglish
Title of host publicationHandbook of Memristor Networks
Pages815-842
Number of pages28
ISBN (Electronic)9783319763750
DOIs
StatePublished - 1 Jan 2019

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