TY - CHAP
T1 - The self-directed channel memristor
T2 - Operational dependence on the metal-chalcogenide layer
AU - Campbell, Kristy A.
N1 - Publisher Copyright:
© Springer Nature Switzerland AG 2019.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The basic self-directed channel memristor is comprised of five layers of Ge2Se3, SnSe, and an oxidizable metal, Ag. Each layer plays a role in the operation of the memristor, influencing both the electrical and thermal properties of the device. Device operation can be altered by manipulation of these layers through material changes, layer ordering, or layer exclusion. In this chapter the function of the SnSe layer is explored through electrical characterization of several device types in which this metal chalcogenide layer has been altered, either by changing the metal, or replacing Se with Te.
AB - The basic self-directed channel memristor is comprised of five layers of Ge2Se3, SnSe, and an oxidizable metal, Ag. Each layer plays a role in the operation of the memristor, influencing both the electrical and thermal properties of the device. Device operation can be altered by manipulation of these layers through material changes, layer ordering, or layer exclusion. In this chapter the function of the SnSe layer is explored through electrical characterization of several device types in which this metal chalcogenide layer has been altered, either by changing the metal, or replacing Se with Te.
UR - http://www.scopus.com/inward/record.url?scp=85084893746&partnerID=8YFLogxK
U2 - 10.1007/978-3-319-76375-0_29
DO - 10.1007/978-3-319-76375-0_29
M3 - Chapter
AN - SCOPUS:85084893746
SN - 9783319763743
SP - 815
EP - 842
BT - Handbook of Memristor Networks
ER -