Abstract
The vertical coupling of active InP based ring resonators and passive feeding waveguides necessitates the use of a waferbonding technology in the fabrication process. The required bond material (BCB) has a low thermal conductivity and will strongly influence the operating temperature and thus the performance of the ring resonator through its insulating effect. A comprehensive thermal analysis of a proposed vertically coupled ring resonator of 50 μm outer radius is undertaken during the design phase to determine the thermal impact of: the design of the wafer bond, the design of the passivation layer and the optical power levels. Thermal abatement strategies for semiconductor lasers are presented.
| Original language | English |
|---|---|
| Pages (from-to) | 421-431 |
| Number of pages | 11 |
| Journal | Microelectronics Reliability |
| Volume | 46 |
| Issue number | 2-4 |
| DOIs | |
| State | Published - Feb 2006 |
| Externally published | Yes |
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