TY - GEN
T1 - Thermal proximity effects of packaged RF high power amplifier discretes
AU - Comber, Brian
AU - Rightley, Michael J.
AU - Fleischer, Amy
PY - 2008
Y1 - 2008
N2 - This paper analyzes the thermal design of an RF High Power amplifier. The device, with a maximum dimension of only .4 mm, has a high power density, dissipating up to 4 W. There is concern about the impacts of device proximity on thermal performance due to desired packaging density. The devices are numerically modeled and the effects of device proximity, heat spreader dimensions, material conductivity, and die bond layer thickness and substrate thickness on device operating temperature are quantified.
AB - This paper analyzes the thermal design of an RF High Power amplifier. The device, with a maximum dimension of only .4 mm, has a high power density, dissipating up to 4 W. There is concern about the impacts of device proximity on thermal performance due to desired packaging density. The devices are numerically modeled and the effects of device proximity, heat spreader dimensions, material conductivity, and die bond layer thickness and substrate thickness on device operating temperature are quantified.
UR - http://www.scopus.com/inward/record.url?scp=44149113530&partnerID=8YFLogxK
U2 - 10.1115/IMECE2007-41221
DO - 10.1115/IMECE2007-41221
M3 - Conference contribution
AN - SCOPUS:44149113530
SN - 0791842991
SN - 9780791842997
T3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings
SP - 59
EP - 66
BT - Electronics and Photonics
T2 - ASME International Mechanical Engineering Congress and Exposition, IMECE 2007
Y2 - 11 November 2007 through 15 November 2007
ER -