TY - GEN
T1 - Thermal proximity effects of packaged RF high power amplifier discretes
AU - Comber, Brian
AU - Rightley, Michael J.
AU - Fleischer, Amy
N1 - Publisher Copyright:
© 2007 by ASME.
PY - 2007
Y1 - 2007
N2 - This paper analyzes the thermal design of an RF High Power amplifier. The device, with a maximum dimension of only .4 mm, has a high power density, dissipating up to 4 W. There is concern about the impacts of device proximity on thermal performance due to desired packaging density. The devices are numerically modeled and the effects of device proximity, heat spreader dimensions, material conductivity, and die bond layer thickness and substrate thickness on device operating temperature are quantified.
AB - This paper analyzes the thermal design of an RF High Power amplifier. The device, with a maximum dimension of only .4 mm, has a high power density, dissipating up to 4 W. There is concern about the impacts of device proximity on thermal performance due to desired packaging density. The devices are numerically modeled and the effects of device proximity, heat spreader dimensions, material conductivity, and die bond layer thickness and substrate thickness on device operating temperature are quantified.
UR - http://www.scopus.com/inward/record.url?scp=84928599529&partnerID=8YFLogxK
U2 - 10.1115/IMECE200741221
DO - 10.1115/IMECE200741221
M3 - Conference contribution
AN - SCOPUS:84928599529
T3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
SP - 59
EP - 66
BT - Electronics and Photonics
T2 - ASME 2007 International Mechanical Engineering Congress and Exposition, IMECE 2007
Y2 - 11 November 2007 through 15 November 2007
ER -