Thermo-Mechanical Characterization of Copper Through-Wafer Interconnects

Peter A. Miranda; Amy J. Moll

doi:10.1109/ECTC.2006.1645756

Thermo-Mechanical Characterization of Copper Through-Wafer Interconnects

Peter A. Miranda, Amy J. Moll

Micron School of Materials Science and Engineering

Boise State University

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Copper through wafer interconnects (TWIs) have become a viable solution to providing interconnectivity between stacked die. In a world where minimizing chip real estate while increasing functionality is the goal for further miniaturization of electronics, TWIs hold a key role as new packaging schemes become critical for overall higher density. Little is known, however, about the impacts of mismatched coefficients of thermal expansion (CTEs) inherent to the materials used in their construction. CTE differences, if left unresolved, can pose reliability issues during TWI operation. This research focuses on providing insight into the stress levels experienced by TWI materials through finite element analysis to gain a better understanding of the possible failure mechanisms associated with the CTE differences.

Original language	American English
Journal	Electrical and Computer Engineering Faculty Publications and Presentations
DOIs	https://doi.org/10.1109/ECTC.2006.1645756
State	Published - 1 Jan 2006

Keywords

copper
integrated circuit interconnections
integrated circuit packaging
thermal expansion

EGS Disciplines

Electrical and Computer Engineering

Access to Document

10.1109/ECTC.2006.1645756License: Unspecified

Thermo-Mechanical Characterization of Copper Through-Wafer IntercFinal published version, 731 KBLicense: Unspecified

Cite this

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title = "Thermo-Mechanical Characterization of Copper Through-Wafer Interconnects",

abstract = " Copper through wafer interconnects (TWIs) have become a viable solution to providing interconnectivity between stacked die. In a world where minimizing chip real estate while increasing functionality is the goal for further miniaturization of electronics, TWIs hold a key role as new packaging schemes become critical for overall higher density. Little is known, however, about the impacts of mismatched coefficients of thermal expansion (CTEs) inherent to the materials used in their construction. CTE differences, if left unresolved, can pose reliability issues during TWI operation. This research focuses on providing insight into the stress levels experienced by TWI materials through finite element analysis to gain a better understanding of the possible failure mechanisms associated with the CTE differences.",

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AU - Moll, Amy J.

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N2 - Copper through wafer interconnects (TWIs) have become a viable solution to providing interconnectivity between stacked die. In a world where minimizing chip real estate while increasing functionality is the goal for further miniaturization of electronics, TWIs hold a key role as new packaging schemes become critical for overall higher density. Little is known, however, about the impacts of mismatched coefficients of thermal expansion (CTEs) inherent to the materials used in their construction. CTE differences, if left unresolved, can pose reliability issues during TWI operation. This research focuses on providing insight into the stress levels experienced by TWI materials through finite element analysis to gain a better understanding of the possible failure mechanisms associated with the CTE differences.

AB - Copper through wafer interconnects (TWIs) have become a viable solution to providing interconnectivity between stacked die. In a world where minimizing chip real estate while increasing functionality is the goal for further miniaturization of electronics, TWIs hold a key role as new packaging schemes become critical for overall higher density. Little is known, however, about the impacts of mismatched coefficients of thermal expansion (CTEs) inherent to the materials used in their construction. CTE differences, if left unresolved, can pose reliability issues during TWI operation. This research focuses on providing insight into the stress levels experienced by TWI materials through finite element analysis to gain a better understanding of the possible failure mechanisms associated with the CTE differences.

KW - copper

KW - integrated circuit interconnections

KW - integrated circuit packaging

KW - thermal expansion

UR - https://scholarworks.boisestate.edu/electrical_facpubs/17

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M3 - Article

JO - Electrical and Computer Engineering Faculty Publications and Presentations

JF - Electrical and Computer Engineering Faculty Publications and Presentations

ER -

Thermo-Mechanical Characterization of Copper Through-Wafer Interconnects

Abstract

Keywords

EGS Disciplines

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