TID Impact on Process Modified CBRAM Cells

M. Ailavajhala, M. Mitkova

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Scopus citations

Abstract

In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.

Original languageAmerican English
Title of host publication2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
DOIs
StatePublished - 1 Jan 2015

Keywords

  • PMC
  • chalcogenide glass
  • electrochemical metallization
  • memristors
  • programmable metallization cell
  • total ionizing dose

EGS Disciplines

  • Electrical and Computer Engineering

Fingerprint

Dive into the research topics of 'TID Impact on Process Modified CBRAM Cells'. Together they form a unique fingerprint.

Cite this