TID Impact on Process Modified CBRAM Cells

M. Ailavajhala; M. Mitkova

doi:10.1109/RADECS.2015.7365685

TID Impact on Process Modified CBRAM Cells

M. Ailavajhala
, M. Mitkova

Electrical Engineering Department

Boise State University

Research output: Chapter in Book/Report/Conference proceeding › Chapter

5 Scopus citations

Abstract

In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.

Original language	American English
Title of host publication	2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
DOIs	https://doi.org/10.1109/RADECS.2015.7365685
State	Published - 1 Jan 2015

Publication series

Name	2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

Keywords

PMC
chalcogenide glass
electrochemical metallization
memristors
programmable metallization cell
total ionizing dose

EGS Disciplines

Electrical and Computer Engineering

Access to Document

10.1109/RADECS.2015.7365685License: Unspecified

http://dx.doi.org/10.1109/RADECS.2015.7365685

Cite this

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title = "TID Impact on Process Modified CBRAM Cells",

abstract = " In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.",

keywords = "PMC, chalcogenide glass, electrochemical metallization, memristors, programmable metallization cell, total ionizing dose",

author = "M. Ailavajhala and M. Mitkova",

year = "2015",

month = jan,

day = "1",

doi = "10.1109/RADECS.2015.7365685",

language = "American English",

series = "2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)",

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T1 - TID Impact on Process Modified CBRAM Cells

AU - Ailavajhala, M.

AU - Mitkova, M.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.

AB - In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.

KW - PMC

KW - chalcogenide glass

KW - electrochemical metallization

KW - memristors

KW - programmable metallization cell

KW - total ionizing dose

UR - https://scholarworks.boisestate.edu/electrical_facpubs/311

UR - http://dx.doi.org/10.1109/RADECS.2015.7365685

U2 - 10.1109/RADECS.2015.7365685

DO - 10.1109/RADECS.2015.7365685

M3 - Chapter

T3 - 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

BT - 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

ER -

TID Impact on Process Modified CBRAM Cells

Abstract

Publication series

Keywords

EGS Disciplines

Access to Document

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