Transformation volume strain in Ni-Mn-Ga thin films

I. R. Aseguinolaza; I. Reyes-Salazar; A. V. Svalov; K. Wilson; W. B. Knowlton; P. Müllner; J. M. Barandiarán; E. Villa; V. A. Chernenko

doi:10.1063/1.4772005

Transformation volume strain in Ni-Mn-Ga thin films

I. R. Aseguinolaza, I. Reyes-Salazar, A. V. Svalov, K. Wilson, W. B. Knowlton, P. Müllner, J. M. Barandiarán, E. Villa, V. A. Chernenko

Micron School of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The temperature dependences of the lattice parameters and residual stress have been measured for a fine-grained Ni_52.2Mn_26.8Ga _21.0 (at. %) thin film fabricated by sputter deposition onto a heated silicon wafer with SiN_x buffer layer. The transformation volume strain in the film was found to be a lattice expansion during the forward martensitic transformation which is opposite to a volume contraction exhibited by bulk Ni-Mn-Ga alloys. This unusual effect can be explained by the substrate-induced residual stresses in the film and the difference in the elastic modulus of austenite and martensite.

Original language	English
Article number	241912
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4772005
State	Published - 10 Dec 2012

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@article{7e99d488c56c4a2f99627bc5b5b25ae0,

title = "Transformation volume strain in Ni-Mn-Ga thin films",

abstract = "The temperature dependences of the lattice parameters and residual stress have been measured for a fine-grained Ni52.2Mn26.8Ga 21.0 (at. %) thin film fabricated by sputter deposition onto a heated silicon wafer with SiNx buffer layer. The transformation volume strain in the film was found to be a lattice expansion during the forward martensitic transformation which is opposite to a volume contraction exhibited by bulk Ni-Mn-Ga alloys. This unusual effect can be explained by the substrate-induced residual stresses in the film and the difference in the elastic modulus of austenite and martensite.",

author = "Aseguinolaza, {I. R.} and I. Reyes-Salazar and Svalov, {A. V.} and K. Wilson and Knowlton, {W. B.} and P. M{\"u}llner and Barandiar{\'a}n, {J. M.} and E. Villa and Chernenko, {V. A.}",

year = "2012",

month = dec,

day = "10",

doi = "10.1063/1.4772005",

language = "English",

volume = "101",

number = "24",

}

TY - JOUR

T1 - Transformation volume strain in Ni-Mn-Ga thin films

AU - Aseguinolaza, I. R.

AU - Reyes-Salazar, I.

AU - Svalov, A. V.

AU - Wilson, K.

AU - Knowlton, W. B.

AU - Müllner, P.

AU - Barandiarán, J. M.

AU - Villa, E.

AU - Chernenko, V. A.

PY - 2012/12/10

Y1 - 2012/12/10

N2 - The temperature dependences of the lattice parameters and residual stress have been measured for a fine-grained Ni52.2Mn26.8Ga 21.0 (at. %) thin film fabricated by sputter deposition onto a heated silicon wafer with SiNx buffer layer. The transformation volume strain in the film was found to be a lattice expansion during the forward martensitic transformation which is opposite to a volume contraction exhibited by bulk Ni-Mn-Ga alloys. This unusual effect can be explained by the substrate-induced residual stresses in the film and the difference in the elastic modulus of austenite and martensite.

AB - The temperature dependences of the lattice parameters and residual stress have been measured for a fine-grained Ni52.2Mn26.8Ga 21.0 (at. %) thin film fabricated by sputter deposition onto a heated silicon wafer with SiNx buffer layer. The transformation volume strain in the film was found to be a lattice expansion during the forward martensitic transformation which is opposite to a volume contraction exhibited by bulk Ni-Mn-Ga alloys. This unusual effect can be explained by the substrate-induced residual stresses in the film and the difference in the elastic modulus of austenite and martensite.

UR - http://www.scopus.com/inward/record.url?scp=84871291882&partnerID=8YFLogxK

U2 - 10.1063/1.4772005

DO - 10.1063/1.4772005

M3 - Article

AN - SCOPUS:84871291882

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241912

ER -

Transformation volume strain in Ni-Mn-Ga thin films

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