Transition from N-Type to P-Type Destroys Ferromagnetism in Semiconducting Sn1-XCoxO2 and Sn1-XCrxO2 Nanoparticles

C. Van Komen; A. Punnoose; M. S. Seehra

Transition from N-Type to P-Type Destroys Ferromagnetism in Semiconducting Sn_1-XCo_xO₂ and Sn_1-XCr_xO₂ Nanoparticles

C. Van Komen, A. Punnoose, M. S. Seehra

Physics Department

Research output: Contribution to journal › Article › peer-review

Abstract

This work reports strong correlations between the structural, magnetic and electronic properties of room temperature ferromagnets (RTFM) Sn _1-x Co _x O ₂ and Sn _1-x Cr _x O ₂ for x = 0 to 0.1. The samples prepared by the sol-gel chemical method show RTFM for x < x _L with the limiting concentration x _L = 0.01 for Co doping and x _L = 0.025 for Cr doping. As doping level x is increased from x = 0, the magnetic moment per ion, μ, increases and the lattice volume V _L decreases up to _x = x _L . For x > x _L , μ dramatically decreases toward zero and V _L increases, the latter suggesting interstitial doping. Thermoelectric measurements showed that the samples are n-type for x < x _L and p-type for x > x _L , suggesting that the RTFM is intrinsic and it is electron mediated.

Original language	American English
Journal	Solid State Communications
State	Published - 1 Dec 2009

Keywords

ferromagnetism
semiconductors

EGS Disciplines

Physics

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Transition from N-Type to P-Type Destroys Ferromagnetism in SemicFinal published version, 84.3 KBLicense: Unspecified

Cite this

@article{4d3991d0ab3d4e1981bc5fd7f6a000e3,

title = "Transition from N-Type to P-Type Destroys Ferromagnetism in Semiconducting Sn1-XCoxO2 and Sn1-XCrxO2 Nanoparticles",

abstract = " This work reports strong correlations between the structural, magnetic and electronic properties of room temperature ferromagnets (RTFM) Sn 1-x Co x O 2 and Sn 1-x Cr x O 2 for x = 0 to 0.1. The samples prepared by the sol-gel chemical method show RTFM for x < x L with the limiting concentration x L = 0.01 for Co doping and x L = 0.025 for Cr doping. As doping level x is increased from x = 0, the magnetic moment per ion, μ, increases and the lattice volume V L decreases up to x = x L . For x > x L , μ dramatically decreases toward zero and V L increases, the latter suggesting interstitial doping. Thermoelectric measurements showed that the samples are n-type for x < x L and p-type for x > x L , suggesting that the RTFM is intrinsic and it is electron mediated.",

keywords = "ferromagnetism, semiconductors",

author = "{Van Komen}, C. and A. Punnoose and Seehra, {M. S.}",

year = "2009",

month = dec,

day = "1",

language = "American English",

}

TY - JOUR

T1 - Transition from N-Type to P-Type Destroys Ferromagnetism in Semiconducting Sn1-XCoxO2 and Sn1-XCrxO2 Nanoparticles

AU - Van Komen, C.

AU - Punnoose, A.

AU - Seehra, M. S.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - This work reports strong correlations between the structural, magnetic and electronic properties of room temperature ferromagnets (RTFM) Sn 1-x Co x O 2 and Sn 1-x Cr x O 2 for x = 0 to 0.1. The samples prepared by the sol-gel chemical method show RTFM for x < x L with the limiting concentration x L = 0.01 for Co doping and x L = 0.025 for Cr doping. As doping level x is increased from x = 0, the magnetic moment per ion, μ, increases and the lattice volume V L decreases up to x = x L . For x > x L , μ dramatically decreases toward zero and V L increases, the latter suggesting interstitial doping. Thermoelectric measurements showed that the samples are n-type for x < x L and p-type for x > x L , suggesting that the RTFM is intrinsic and it is electron mediated.

AB - This work reports strong correlations between the structural, magnetic and electronic properties of room temperature ferromagnets (RTFM) Sn 1-x Co x O 2 and Sn 1-x Cr x O 2 for x = 0 to 0.1. The samples prepared by the sol-gel chemical method show RTFM for x < x L with the limiting concentration x L = 0.01 for Co doping and x L = 0.025 for Cr doping. As doping level x is increased from x = 0, the magnetic moment per ion, μ, increases and the lattice volume V L decreases up to x = x L . For x > x L , μ dramatically decreases toward zero and V L increases, the latter suggesting interstitial doping. Thermoelectric measurements showed that the samples are n-type for x < x L and p-type for x > x L , suggesting that the RTFM is intrinsic and it is electron mediated.

KW - ferromagnetism

KW - semiconductors

UR - https://scholarworks.boisestate.edu/physics_facpubs/27

M3 - Article

SN - 0038-1098

JO - Solid State Communications

JF - Solid State Communications

ER -