Tunneling electron induced bromine hopping on Si(100)-(2 × 1)

Koji S. Nakayama; E. Graugnard; J. H. Weaver

Tunneling electron induced bromine hopping on Si(100)-(2 × 1)

Koji S. Nakayama, E. Graugnard, J. H. Weaver

Micron School of Materials Science and Engineering

University of Illinois at Urbana-Champaign

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Scanning tunneling microscopy (STM) offers a way to visualize individual atoms and molecules on surfaces. Recently, attention has focused on STM-based manipulation of surface moieties and on their electronic properties in metal junctions. This paper shows that electrons tunneling into the surface under normal scanning conditions induce migration of covalently bonded Br atoms on Si(100)-(2X1).

Original language	English
Article number	266106
Pages (from-to)	266106/1-266106/4
Journal	Physical Review Letters
Volume	89
Issue number	26
State	Published - 23 Dec 2002

Cite this

@article{1dc30b83d9614794ba6ad801191cec14,

title = "Tunneling electron induced bromine hopping on Si(100)-(2 × 1)",

abstract = "Scanning tunneling microscopy (STM) offers a way to visualize individual atoms and molecules on surfaces. Recently, attention has focused on STM-based manipulation of surface moieties and on their electronic properties in metal junctions. This paper shows that electrons tunneling into the surface under normal scanning conditions induce migration of covalently bonded Br atoms on Si(100)-(2X1).",

author = "Nakayama, {Koji S.} and E. Graugnard and Weaver, {J. H.}",

year = "2002",

month = dec,

day = "23",

language = "English",

volume = "89",

pages = "266106/1--266106/4",

number = "26",

}

TY - JOUR

T1 - Tunneling electron induced bromine hopping on Si(100)-(2 × 1)

AU - Nakayama, Koji S.

AU - Graugnard, E.

AU - Weaver, J. H.

PY - 2002/12/23

Y1 - 2002/12/23

N2 - Scanning tunneling microscopy (STM) offers a way to visualize individual atoms and molecules on surfaces. Recently, attention has focused on STM-based manipulation of surface moieties and on their electronic properties in metal junctions. This paper shows that electrons tunneling into the surface under normal scanning conditions induce migration of covalently bonded Br atoms on Si(100)-(2X1).

AB - Scanning tunneling microscopy (STM) offers a way to visualize individual atoms and molecules on surfaces. Recently, attention has focused on STM-based manipulation of surface moieties and on their electronic properties in metal junctions. This paper shows that electrons tunneling into the surface under normal scanning conditions induce migration of covalently bonded Br atoms on Si(100)-(2X1).

UR - http://www.scopus.com/inward/record.url?scp=0038547539&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0038547539

SN - 0031-9007

VL - 89

SP - 266106/1-266106/4

JO - Physical Review Letters

JF - Physical Review Letters

IS - 26

M1 - 266106

ER -

Tunneling electron induced bromine hopping on Si(100)-(2 × 1)

Abstract

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