TY - GEN
T1 - Understanding the Failure Mechanisms of Silicon Gated Field Emitters
AU - Bhattacharjee, Rushmita
AU - Bhattacharva, Ranajoy
AU - Guerrera, Stephen A.
AU - Karaulac, Nedeliko
AU - Rughoobur, Girish
AU - Chern, Winston
AU - Akinwande, Akintunde I.
AU - Browning, Jim
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Gated field emitter arrays (GFEAs) can fail due to various mechanisms which are not well understood. In this paper, several proposed failure mechanisms are investigated using simulation and experiment. The modelling performed using CST considers an ion bombardment zone to calculate the locations and number of ions that hit the emitter tip apex. As the starting location of the ions moves away from the tip, the fraction hitting the tip apex increases until 5 μ m from the tip and then decreases until only ions born directly above the tip impact. Electrical measurements of arcs show that arcs only occur during forward bias with emission rather than in reverse bias indicating the mechanism is not surface breakdown.
AB - Gated field emitter arrays (GFEAs) can fail due to various mechanisms which are not well understood. In this paper, several proposed failure mechanisms are investigated using simulation and experiment. The modelling performed using CST considers an ion bombardment zone to calculate the locations and number of ions that hit the emitter tip apex. As the starting location of the ions moves away from the tip, the fraction hitting the tip apex increases until 5 μ m from the tip and then decreases until only ions born directly above the tip impact. Electrical measurements of arcs show that arcs only occur during forward bias with emission rather than in reverse bias indicating the mechanism is not surface breakdown.
KW - arcing
KW - Ion bombardment
KW - Silicon GFEAs
UR - http://www.scopus.com/inward/record.url?scp=85168660895&partnerID=8YFLogxK
U2 - 10.1109/IVNC57695.2023.10188883
DO - 10.1109/IVNC57695.2023.10188883
M3 - Conference contribution
AN - SCOPUS:85168660895
T3 - 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023
SP - 74
EP - 76
BT - 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023
Y2 - 10 July 2023 through 13 July 2023
ER -